sot23 silicon planar high speed switching diode pair common anode issue 1 - may 1995 pin configurations partmarking details BAW56 a1 absolute maximum ratings. parameter symbol value unit continuous reverse voltage v r 70 v repetitive peak reverse voltage v rrm 70 v average rectified forward current ( over any 20ms period) i f(av) 100 ma repetitive peak forward current i frm 200 ma power dissipation at t amb =25c p tot 330 mw operating and storage temperature range t j :t stg -55 to +150 c characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. forward voltage v f 715 855 1.1 1.3 mv mv v v i f =1ma i f =10ma i f =50ma i f =100ma reverse current i r 30 2.5 50 m a m a m a v r =25v, t j =150c v r =70v v r =70v, t j =150c diode capacitance c d 2pff=1mhz forward recovery voltage v fr 1.75 v switched to i f =10ma, t r =20ns reverse recovery time t rr 6 ns switched from if=10ma, v r =1v r l =100 w , ir=1ma spice parameter data is available upon request for this device for switching circuit information refer to bav99 datasheet. BAW56 page no 1 3 2 1 3 2 sot23 BAW56
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